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 (R)
BU208A BU508A/BU508AFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
s s s
s
STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE.
TO-3
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
1 2
3 2
3 2
TO-218
1
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
For TO-3 : C = Tab E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj June 1998 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) TO - 3 Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
o
Value 1500 700 10 8 15 T O - 218 125 150 ISOW ATT 218 50 -65 to 150 150 150 175
Unit V V V A A W
o o
-65 to 175 -65 to 150
C C 1/8
BU208A / BU508A / BU508AFI
THERMAL DATA
T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO-218 1 ISO WATT218 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat ) V BE(s at) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time Fall T ime Transition F requency Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A 700 10 1 1.3 T C = 125 C
o
Min.
Typ .
Max. 1 2 100
Un it mA mA A V V V V
ts tf fT
I C = 4.5 A hFE = 2.5 VCC = 140 V L C = 0.9 mH L B = 3 H I C = 0.1 A VCE = 5 V f = 5 MHz
7 0.55 7
s s MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area (TO-3)
Safe Operating Area (TO-218/ISOWATT218)
2/8
BU208A / BU508A / BU508AFI
DC Current Gain Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
3/8
BU208A / BU508A / BU508AFI
Figure 1: Inductive Load Switching Test Circuit.
4/8
BU208A / BU508A / BU508AFI
TO-3 MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D
C
U
V
O
N
R
B
P003F
5/8
E
BU208A / BU508A / BU508AFI
TO-218 (SOT-93) MECHANICAL DATA
mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054
DIM.
A
C
L5 L3 L2
L6
D
E H F R 1 2 3
P025A
6/8
G
BU208A / BU508A / BU508AFI
ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D
P025C
7/8
BU208A / BU508A / BU508AFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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